Download e-book for iPad: Analog Integrated Circuit Design (2nd Edition) by Tony Chan Carusone, David A. Johns, Kenneth W. Martin

By Tony Chan Carusone, David A. Johns, Kenneth W. Martin

ISBN-10: 0470770104

ISBN-13: 9780470770108

The 2d variation of Analog built-in Circuit Design makes a speciality of extra insurance approximately various kinds of circuits that experience elevated in value long ago decade. in addition, the textual content is greater with fabric on CMOS IC gadget modeling, up-to-date processing format and improved insurance to mirror technical strategies. CMOS units and circuits have extra impact during this version in addition to a discounted volume of textual content on BiCMOS and bipolar info. New chapters contain subject matters on frequency reaction of analog ICs and simple conception of suggestions amplifiers.  

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Additional resources for Analog Integrated Circuit Design (2nd Edition)

Example text

Its value is given by C gd = C ox WL ov Key Point: The gate-drain capacitance Cgd, also known as the Miller capacitance, is due to physical overlap of the gate and drain regions as well as fringing fields. It is especially important when there is a large voltage gain between gate and drain. 96) where, once again, Lov is usually empirically derived. Two other capacitors are often important in integrated circuits. These are the source and drain sidewall capacitances, C s-sw and C d-sw. These capacitances can + be large because of some highly doped p regions under the thick field oxide called field implants.

This charge–voltage relationship is modelled by a nonlinear depletion capacitance. 15) with respect to V R . Such a differentiation results in Key Point: The charge– voltage relationship of a reverse-biased pn junction is modeled by a nonlinear depletion capacitance. 20) It should be noted that many of the junctions encountered in integrated circuits are one-sided junctions with the lightly doped side being the substrate or sometimes what is called the well. The more heavily doped side is often used to form a contact to interconnecting metal.

9(b). For small positive gate voltages, the positive carriers in the channel under the gate are initially – repulsed and the channel changes from a p doping level to a depletion region. 6 In short, a sufficiently large positive gate-source voltage changes the channel beneath the gate to an n region, and the channel is said to be inverted. The gate-source voltage, for which the concentration of electrons under the gate is equal to the concentration of holes in the p– substrate far from the gate, is commonly referred to as the transistor threshold voltage and denoted V tn (for n-channel transistors).

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Analog Integrated Circuit Design (2nd Edition) by Tony Chan Carusone, David A. Johns, Kenneth W. Martin


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